micropac industries, inc. optoelectronic products division ? ? ? ? 725 e.walnut st., garland, tx 75040 ? ? ? ? (972)272-3571 ? ? ? ? fax (972)487-6918 www.micropac.com e-mail: optosales @ micropac.com 66260 6 pin gull wing proton radiation tolerant optocoupler optoelectronic products division 12/23/2009 features: ? high reliability ? base lead provided for conventional transistor biasing ? rugged package ? stability over wide temperature ? +1000v electrical isolation applications: ? eliminate ground loops ? level shifting ? line receiver ? switching power supplies ? motor control description the 66260 is a single channel device electrically similar to the 4n48. this product has been designed to be more tolerant to proton radiation. the 66260 optocoupler is packaged in a hermetically sealed 6 pin gull wing package. this device can be supplied to customer specifications as well as tested and screened to the requirements of mil-prf-19500 up to space (jans) level. absolute maximum ratings input to output voltage ....................................................................................................... ................................................... 1 kv emitter-base voltage .......................................................................................................... ..................................................... 7 v collector-emitter voltage (value applies to emitter-base open-circuited & the input-diode equal to zero) ...................... .. 60 v collector-base voltage ........................................................................................................ .................................................. 60 v reverse input voltage ........................................................................................................ .................................................... 7 v input diode continuous forward current at (or below) 65c free-air temperature (see note 1) .................................. 50 ma peak forward input current (value applies for tw 1 s, prr < 300 pps) ............................................................................ 1 a continuous collector current .................................................................................................. ........................................... 50 ma continuous transistor power dissipation at (or below) 25 c free-air temperature (see note 2) ............................... 300 mw storage temperature ........................................................................................................... .............................. -55c to +150c operating free-air temperature range .......................................................................................... .................. -55c to +100c lead solder temperature (10 seconds max.) ................................................................................................................... 240c notes: 1. derate linearly to 100c free-air temperature at the rate of 0.80 ma/c above 25c. 2. derate linearly to 100c free-air temperature at the rate of 3 mw/c above 25 c. package dimensions schematic d iagram 6x 0.015 0.125 4x 0.050 0.008 max. 0.130 0.193 0.3500.010 ? a 1 k 3 4 c 5 b 6 e 1 a 2 nc 3 k e 6 b 5 c 4 a - anode of diode b - base of transistor c - collector of transistor e - emitter of transistor k - cathode of diode 0.010 all tolerances are 0.005 unless otherwise noted. 79 min.
micropac industries, inc. optoelectronic products division ? ? ? ? 725 e.walnut st., garland, tx 75040 ? ? ? ? (972)272-3571 ? ? ? ? fax (972)487-6918 www.micropac.com e-mail: optosales @ micropac.com 66260 6 pin gull wing proton radiation tolerant optocoupler 12/23/2009 electrical characteristics t a = 25 c unless otherwise specified. parameter symbol min typ max units test conditions note input diode static reverse current i r 100 a v r = 3 v input diode static forward voltage -55 c v f 1.0 2.2 v i f = 10 ma input diode static forward voltage +25 c v f 0.8 1.8 2.0 v i f = 10 ma input diode static forward voltage +100 c v f 0.8 2.2 v i f = 10 ma output transistor t a = 25 c unless otherwise specified. parameter symbol min typ max units test conditions note collector-base breakdown voltage v ( br ) cbo 45 v i c = 100 a, i b = 0, i f = 0 collector-emitter breakdown voltage v ( br ) ceo 40 v i c = 1ma, i b = 0, i f = 0 emitter-base breakdown voltage v ( br ) ebo 7 v i c = 0 ma, i e = 100 a, i f = 0 off-state collector current +100 c i ceo i ceo 100 100 na a v ce = 20 v, i f = 0 ma, i b = 0 v ce = 20 v, i f = 0 ma, i b = 0 coupled characteristics t a = 25 c unless otherwise specified. parameter symbol min typ max units test conditions note on state collector current i c(on) 1.0 ma v ce = 5 v, i f = 1ma, i b = 0 on state collector current +100 c i c(on) 1.0 ma v ce = 5.0 v, i f = 2 ma, i b = 0 on state collector current -55 c i c ( on ) 1.0 ma v ce = 5 v, i f = 2 ma, i b = 0 collector-emitter saturation voltage v ce ( sat ) 0.3 v i f = 2 ma, i c = 1 ma input to output internal resistance r io 10 11 ? v in-out = 1000 v 1 input to output capacitance c io 2.5 5 pf f = 1mhz, v in-out = 1000 v 1 rise time-phototransistor operation t r 5 10 s v cc = 10 v, i f = 10 ma, r l = 100 ? , i b = 0 fall time-phototransistor operation t f 5 10 s v cc = 10 v, i f = 10 ma, r l = 100 ? , i b = 0 notes: 1. these parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted tog ether. 2. this parameter must be measured using pulse techniques (t w = 100 s duty cycle < 1%). recommended operating conditions: parameter symbol min max units input current, low level i fl 0 90 a input current, high level i fh 1 10 ma supply voltage v ce 5 10 v operating temperature t a -55 100 c selection guide part number part description 66260-001 commercial 66260-101 screened to jan level 66260-103 screened to jantx level 66260-105 screened to jantxv level 66260-300 screened to jans level
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